1999. 3. 22
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTB1366
TRIPLE DIFFUSED PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector Saturation Voltage
: V
CE(sat)
=-1.0V(Max.) at I
C
=-2A, I
B
=-0.2A.
Collector Power Dissipation
: P
C
=25W (Tc=25 )
Complementary to KTD2058.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification O:60 120, Y:100 200
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-60
V
Emitter-Base Voltage
V
EBO
-7
V
Collector Current
I
C
-3
A
Base Current
I
B
-0.5
A
Collector Power
Dissipation
Ta=25
P
C
2
W
Tc=25
25
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-60V, I
E
=0
-
-
-100
A
Emitter Cut-off Current
I
EBO
V
EB
=-7V, I
C
=0
-
-
-100
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-50mA, I
B
=0
-60
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=-5V, I
C
=-0.5A
60
-
200
h
FE
(2)
V
CE
=-5V, I
C
=-3A
20
-
-
Collector Emitter Saturation Voltage
V
CE(sat)
I
C
=-2A, I
B
=-0.2A
-
-0.25
-1.0
V
Base-Emitter Voltage
V
BE
V
CE
=-5V, I
C
=-0.5A
-
-0.7
-1.0
V
Transition Frequency
f
T
V
CE
=-5V, I
C
=-0.5A
-
9
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
150
-
pF
Switching
Time
Turn-on Time
t
on
-
0.4
-
S
Storage Time
t
stg
-
1.7
-
Fall Time
t
f
-
0.5
-
I
B1
15
B1
I
CC
V =-30V
I
B2
I
B2
20
sec
-I =I =0.2A
1%
B1 B2
OUTPUT
DUTY CYCLE
INPUT
0
<
=
1999. 3. 22
2/2
KTB1366
Revision No : 3
COLLECTOR CURRENT I (A)
0
C
-1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
COLLECTOR-EMITTER SATURATION
CE(sat)
-0.02
-0.3
-0.1
-0.02
COLLECTOR CURRENT I (A)
C
V - I
h - I
C
COLLECTOR CURRENT I (A)
FE
DC CURRENT GAIN h
TRANSIENT THERMAL RESISTANCE
th(t)
0.1
10
TIME t (sec)
R - t
-2
-3
-4
-5
-6
-1
-2
-3
-4
COMMON
EMITTER
Tc=25 C
-80
-70
-60
-50
-40
-30
-20
0
I =-10mA
B
CE(sat)
C
VOLTAGE V (V)
-1
-3
-5
-0.05
-0.1
-0.3
-0.5
-1
COMMON EMITTER
I /I =10
C B
Tc=10
0
C
Tc=25 C
Tc=-25 C
FE
C
CE
V =-5V
COMMON EMITTER
1k
500
300
100
50
-3
-1
-0.02
-0.1
-0.3
20
Tc=100 C
Tc=25 C
Tc=-25 C
th(t)
R ( C/W)
-3
-2
10
-1
10
1
10
2
10
1
10
100
1k
(1) WITHOUT HEAT SINK
(2) INFINITE HEAT SINK
(1) Ta=25 C
(2) Tc=25 C
COLLECTOR CURRENT I (A)
C
-0.2
-30
-10
-3
-1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
-100
-0.5
-1
-3
-5
-10
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX.(PULSED)
C
*
C
I MAX.(CONTINUOUS)
1mS
10mS
100m
S
1s
DC
O
PE
RA
TIO
N
Tc=
25
C
*
*
*
*
V MAX.
CEO
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